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Quote for Electronic Components Part SUM110N06-3M9H-E3 by Siliconix Vishay
If you are looking for a great deal on high-quality Discrete Semiconductors parts like MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 0.00325Ohm,ID 110A,TO-263,PD 375W,VGS +/-20V, look no further than Industrials Domain. With an inventory of over 2 billion new and obsolete parts, we are confident that we can help fulfill your requirements while offering unbeatable lead times. This item, listed alongside the part number SUM110N06-3M9H-E3, was manufactured by Siliconix Vishay and is currently available for immediate purchase. If you are interested in receiving a competitive quotation for SUM110N06-3M9H-E3, we invite you to use our Instant RFQ service. When completing the RFQ, we ask that you provide as much information as possible, including the quantity needed, price target, and expected delivery date, so that our team may create a personalized solution. With account managers on standby 24/7x365, you will receive a response in 15 minutes or less.
At Industrials Domain, we offer numerous Electronic Components parts from leading manufacturers like Siliconix Vishay. Furthermore, as AS9120B, ISO 9001:2015, and FAA AC 00-56B certified and accredited distributor, we stand by the quality of our inventory. In addition, we are the only independent distributor with a No China Sourcing pledge, meaning your order is fully traceable and ships with its qualifying certificates, as applicable. Submit a quote for SUM110N06-3M9H-E3 - MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 0.00325Ohm,ID 110A,TO-263,PD 375W,VGS +/-20V today, and see why many customers choose us as their number one distributor.
| Product Attribute of SUM110N06-3M9H-E3 | |
|---|---|
| Application | Automotive such as high-side switch, motor drives, 12 V battery |
| Channel Type | N |
| Configuration | Single |
| Dimensions | 10.414 x 9.652 x 4.826 mm |
| Drain Current | 110 A |
| Drain to Source On Resistance | 0.0082 O |
| Drain to Source Voltage | 60 V |
| Fall Time | 14 nS |
| Forward Transconductance | 30 S |
| Forward Voltage, Diode | 1.1 V |
| Junction to Ambient Thermal Resistance | 40 C/W |
| Length | 0.41" (10.414mm) |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating and Storage Temperature | -55 to +175 C |
| Package Type | TO-263 |
| Polarization | N-Channel |
| Power Dissipation | 375 W |
| Product Header | TrenchFET Power MOSFET |
| Resistance, Thermal, Junction to Case | 0.4 C/W |
| Series | SUM Series |
| Total Gate Charge | 200 nC |
| Turn Off Delay Time | 75 ns |
| Turn On Delay Time | 45 ns |
| Typical Gate Charge @ Vgs | 200 nC @ 10 V |
| Voltage, Breakdown, Drain to Source | 60 V |
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