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Quote for Electronics And Automation Part IRF1010ESPBF by Infineon
If you are looking for a great deal on high-quality parts like MOSFET; 60V; 83A; 12 MOHM; 86.6 NC QG; D2-PAK, look no further than Industrials Domain. With an inventory of over 2 billion new and obsolete parts, we are confident that we can help fulfill your requirements while offering unbeatable lead times. This item, listed alongside the part number IRF1010ESPBF, was manufactured by Infineon and is currently available for immediate purchase. If you are interested in receiving a competitive quotation for IRF1010ESPBF, we invite you to use our Instant RFQ service. When completing the RFQ, we ask that you provide as much information as possible, including the quantity needed, price target, and expected delivery date, so that our team may create a personalized solution. With account managers on standby 24/7x365, you will receive a response in 15 minutes or less.
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| Product Attribute of IRF1010ESPBF | |
|---|---|
| Channel Type | N |
| Configuration | Single |
| Dimensions | 10.67 x 9.65 x 4.83 mm |
| Drain Current | 84 A |
| Drain to Source On Resistance | 12 mO |
| Drain to Source Voltage | 60 V |
| Forward Transconductance | 69 S |
| Forward Voltage, Diode | 1.3 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.19" (4.83mm) |
| Input Capacitance | 3210 pF @ 25 V |
| Length | 0.42" (10.67mm) |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Package Type | D2PAK |
| Power Dissipation | 200 W |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +175 °C |
| Turn Off Delay Time | 48 ns |
| Turn On Delay Time | 12 ns |
| Typical Gate Charge @ Vgs | Maximum of 130 nC @ 10 V |
| Width | 0.38" (9.65mm) |
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