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Quote for Electronics And Automation Part MMFT960T1G by On Semiconductor
If you are looking for a great deal on high-quality parts like MOSFET, Power,N-Ch,VDSS 60VDC,RDS(ON) 1.7 Ohms,ID 300mA,SOT-223 (TO-261),PD 0.8W, look no further than Industrials Domain. With an inventory of over 2 billion new and obsolete parts, we are confident that we can help fulfill your requirements while offering unbeatable lead times. This item, listed alongside the part number MMFT960T1G, was manufactured by On Semiconductor and is currently available for immediate purchase. If you are interested in receiving a competitive quotation for MMFT960T1G, we invite you to use our Instant RFQ service. When completing the RFQ, we ask that you provide as much information as possible, including the quantity needed, price target, and expected delivery date, so that our team may create a personalized solution. With account managers on standby 24/7x365, you will receive a response in 15 minutes or less.
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| Product Attribute of MMFT960T1G | |
|---|---|
| Channel Type | N |
| Configuration | Single |
| Dimensions | 6.7 x 3.7 x 1.65 mm |
| Drain Current | 300 mA |
| Drain to Source On Resistance | 1.7 O |
| Drain to Source Voltage | 60 V |
| Forward Transconductance | 600 mS |
| Gate to Source Voltage | 30 V |
| Height | 0.065" (1.65mm) |
| Input Capacitance | 65 pF @ 25 V |
| Length | 0.263" (6.7mm) |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3+Tab |
| Package Type | SOT-223 |
| Polarization | N-Channel |
| Power Dissipation | 0.8 W |
| Product Header | N-Channel Power MOSFET |
| Series | Power MOSFET Series |
| Temperature Operating Range | -65 to +150 C |
| Total Gate Charge | 3.2 nC |
| Typical Gate Charge @ Vgs | 3.2 nC @ 10 V |
| Voltage, Breakdown, Drain to Source | 60 V |
| Width | 0.146" (3.7mm) |
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