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Quote for Electronics And Automation Part SI2305DS-T1-E3 by Siliconix Vishay
If you are looking for a great deal on high-quality parts like MOSFET, Power,P-Ch,VDSS -8V,RDS(ON) 0.044Ohm,ID +/-3.5A,TO-236 (SOT-23),PD 1.25W, look no further than Industrials Domain. With an inventory of over 2 billion new and obsolete parts, we are confident that we can help fulfill your requirements while offering unbeatable lead times. This item, listed alongside the part number SI2305DS-T1-E3, was manufactured by Siliconix Vishay and is currently available for immediate purchase. If you are interested in receiving a competitive quotation for SI2305DS-T1-E3, we invite you to use our Instant RFQ service. When completing the RFQ, we ask that you provide as much information as possible, including the quantity needed, price target, and expected delivery date, so that our team may create a personalized solution. With account managers on standby 24/7x365, you will receive a response in 15 minutes or less.
At Industrials Domain, we offer numerous Electronics And Automation parts from leading manufacturers like Siliconix Vishay. Furthermore, as AS9120B, ISO 9001:2015, and FAA AC 00-56B certified and accredited distributor, we stand by the quality of our inventory. In addition, we are the only independent distributor with a No China Sourcing pledge, meaning your order is fully traceable and ships with its qualifying certificates, as applicable. Submit a quote for SI2305DS-T1-E3 - MOSFET, Power,P-Ch,VDSS -8V,RDS(ON) 0.044Ohm,ID +/-3.5A,TO-236 (SOT-23),PD 1.25W today, and see why many customers choose us as their number one distributor.
| Product Attribute of SI2305DS-T1-E3 | |
|---|---|
| Channel Type | P |
| Configuration | Single |
| Dimensions | 3.04 x 1.4 x 1.02 mm |
| Drain Current | ±3.5 A |
| Drain to Source On Resistance | 0.044 O |
| Drain to Source Voltage | -8 V |
| Forward Transconductance | 8.5 S |
| Forward Voltage, Diode | -1.2 V |
| Gate to Source Voltage | 8 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Package Type | TO-236 |
| Polarization | P-Channel |
| Power Dissipation | 1.25 W |
| Product Header | TrenchFET Power MOSFET |
| Series | SI23 Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 10 nC |
| Turn Off Delay Time | 55 ns |
| Turn On Delay Time | 13 ns |
| Typical Gate Charge @ Vgs | 10 nC @ -4 V |
| Voltage, Breakdown, Drain to Source | -8 V |
| Width | 0.055" (1.4mm) |
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